Description:

• N-Channel MOSFET Power Infineon's 55V discrete HEXFET power MOSFETs comprise N-channel devices in surface mount and leaded packages, as well as form factors that may meet practically every board layout and thermal design need. 
• By reducing conduction losses, the resistance benchmark over the range enables designers to provide the best possible system efficiency. 
• The Cool MOS, Opti MOS, and Strong IRFET families are among the many broad and extensive MOSFET devices that Infineon provides. 
• They give best-in-class performance, resulting in increased efficiency, power density, and cost-effectiveness. 
• AEC-Q101 industry standards are advantageous for designs that demand superior quality and improved protective measures. MOSFETs with automotive qualification.