Description:

• High-voltage semiconductor MOSFET. 
• It has the lowest on-state resistance among planar MOSFETs and offers excellent switching performance and avalanche energy strength. 
• Furthermore, the inbuilt gate-source ESD diode enables the MOSFET to sustain HBM surge stress of more than 2000 V. 
  MOSFETs are appropriate for switching power converter applications such as power factor correction (PFC), flat panel displays (FPD), TV power, ATX (Advanced Technology Extended), and electronic light ballasts.