Description:

• The MB81256-10 Page Mode DRAM is a durable memory component that is widely utilized in older computing systems and electronics.
• Memory Configuration: This DRAM is structured as 256K by 1 bit, making it a dense memory solution at the time.
• Access Time: The chip has an access time of 100 nanoseconds, which allows for relatively quick read and write cycles.
• Technology: This DRAM is created with NMOS (Negative-channel Metal-Oxide Semiconductor) technology, which was common in memory chips at the time.
• The MB81256-10 is packaged in an 18-pin Ceramic Quad Chip Carrier (CQCC18) packaging, ensuring the chip's endurance and stability.
• Supply Voltage: It normally operates at 5V, which was common for many electrical components at the time.