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MB81256-10 Page Mode DRAM, 256KX1, 100ns, NMOS, CQCC18
Description:
- The MB81256-10 Page Mode DRAM is a durable memory component that is widely utilized in older computing systems and electronics.
- Memory Configuration: This DRAM is structured as 256K by 1 bit, making it a dense memory solution at the time.
- Access Time: The chip has an access time of 100 nanoseconds, which allows for relatively quick read and write cycles.
- Technology: This DRAM is created with NMOS (Negative-channel Metal-Oxide Semiconductor) technology, which was common in memory chips at the time.
- The MB81256-10 is packaged in an 18-pin Ceramic Quad Chip Carrier (CQCC18) packaging, ensuring the chip's endurance and stability.
- Supply Voltage: It normally operates at 5V, which was common for many electrical components at the time.
Specifications:
- Memory Configuration: 256K x 1 bit.
- Access Time: 100 nanoseconds.
- Technology: NMOS (Negative-channel Metal-Oxide Semiconductor).
- Package Type: 18-pin Ceramic Quad Chip Carrier (CQCC18).
- Supply Voltage: 5V ± 10%.
- Power Dissipation: Active: 660 mW, Standby: 105 mW.
- Operating Temperature: 0°C to 70°C (Commercial Grade).
- Refresh Cycles: 256 cycles, every 4 ms.
- RAS Access Time: 80 ns.
- Cycle Time: 190 ns.
- Output Type: Tri-state output.
- Input Levels: TTL-compatible inputs.MB81256-10 Page Mode DRAM, 256KX1, 100ns, NMOS, CQCC18
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