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G065N07 N-Channel MOSFET TO-220 70V 70A 62.5W
Description:
- A metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a field-effect transistor (FET with an insulated gate) in which the voltage controls the device's conductivity.
- It is employed for signal amplification or switching.
- Electronic signals can be switched or amplified by using the conductivity's ability to change with the applied voltage.
- In both digital and analog circuits, MOSFETs are now even more prevalent than BJTs (bipolar junction transistors).
Specifications:
- Power Dissipation: 62.5W.
- Drain-source voltage: 70V.
- Gate-to-Source Voltage: ± 20V.
- Drain Current: 70A.
- Junction Temperature: 175°C.
- Drain-to-Source On-Resistance (Max.): 0.0065 Ω.
- Package: TO-251
SKU | MOS-0082-F13 |
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