18N50C N-Channel MOSFET 500V 18A TO-220F1

ZAR 19.60 ZAR 17.04
In stock
SKU
MOS-0074-F13

Description:

  • A metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a field-effect transistor (FET with an insulated gate) in which the voltage controls the device's conductivity. 
  • It is employed for signal amplification or switching. 
  • Electronic signals can be switched or amplified by using the conductivity's ability to change with the applied voltage. 
  • In both digital and analog circuits, MOSFETs are now even more prevalent than BJTs (bipolar junction transistors).
  • APPLICATIONS: Designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.

Specifications:

  • Drain-Source Voltage: 500V.
  • Gate-Source Voltage-Continuous: ±30V.
  • Drain Current-Continuous: 18A.
  • Drain Current Pulsed: 72A.
  • Avalanche current: 18A.
  • Power Dissipation: 38.5W.
  • Junction Temperature: 150°C.
  • Storage Temperature: -55 to 150°C.
  • Min. Drain-Source Breakdown Voltage: 500V.
  • Drain-Source On-Resistance (max.): 0.265 Ω.
  • Casing: TO-220F1.
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