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18N50C N-Channel MOSFET 500V 18A TO-220F1
Description:
- A metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a field-effect transistor (FET with an insulated gate) in which the voltage controls the device's conductivity.
- It is employed for signal amplification or switching.
- Electronic signals can be switched or amplified by using the conductivity's ability to change with the applied voltage.
- In both digital and analog circuits, MOSFETs are now even more prevalent than BJTs (bipolar junction transistors).
- APPLICATIONS: Designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.
Specifications:
- Drain-Source Voltage: 500V.
- Gate-Source Voltage-Continuous: ±30V.
- Drain Current-Continuous: 18A.
- Drain Current Pulsed: 72A.
- Avalanche current: 18A.
- Power Dissipation: 38.5W.
- Junction Temperature: 150°C.
- Storage Temperature: -55 to 150°C.
- Min. Drain-Source Breakdown Voltage: 500V.
- Drain-Source On-Resistance (max.): 0.265 Ω.
- Casing: TO-220F1.
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