Specifications:

• Type: Silicon epitaxial fast switching diode

• Maximum Reverse Voltage (V_RRM): 100V

• Average Forward Current (I_F): 150mA

• Peak Forward Surge Current (I_FSM): 500mA (10µs pulse)

• Forward Voltage Drop (V_F): ~1V at 10mA

• Reverse Recovery Time (t_rr): 4–8ns

• Junction Capacitance (C_j): ~4pF

• Power Dissipation (P_D): Up to 500mW

• Operating Temperature Range: –65°C to +175°C