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2SK3878 N-Channel MOSFET 9A 900V 3-Pin
Description:
- A metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a field-effect transistor (FET with an insulated gate) in which the voltage controls the device's conductivity.
- It is employed for signal amplification or switching.
- Electronic signals can be switched or amplified by using the conductivity's ability to change with the applied voltage.
- In both digital and analog circuits, MOSFETs are now even more prevalent than BJTs (bipolar junction transistors).
Specifications:
- Drain-Source Voltage: 900V.
- Drain-gate voltage: 900V.
- Gate-Source Voltage: ±30V.
- Drain Current-DC: 9A.
- Drain Current Pulsed: 27A.
- Power Dissipation TC=25°C: 150W.
- Avalanche current: 9A.
- Channel Temperature: 150°C.
- Storage Temperature: -55 to 150°C.
- Min. Drain-Source Breakdown Voltage: 900V.
- Drain-Source On-Resistance (max.): 1.3Ω.
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