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CT2N3904 NPN Silicon MOSFET Transistor 200mA 40V 625mW
Description:
- A metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a field-effect transistor (FET with an insulated gate) in which the voltage controls the device's conductivity.
- It is employed for signal amplification or switching.
- Electronic signals can be switched or amplified by using the conductivity's ability to change with the applied voltage.
- In both digital and analog circuits, MOSFETs are now even more prevalent than BJTs (bipolar junction transistors).
- APPLICATIONS: Designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.
Specifications:
- Collector–Emitter Voltage: 40VDC.
- Collector–Base Voltage: 60VDC.
- Emitter–Base Voltage: 6.0VDC.
- Collector Current – Continuous: 200mADC.
- Total Device Dissipation at TA=25°C: 625mW.
- Device Dissipation Derate above 25°C: 5.0mW/°C.
- Operating and Storage Junction Temperature Range: -55 to +150°C.
- Casing: TO-92.
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