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2SK3568 Silicon N-Channel MOSFET 40W 500V 12A
Description:
- A metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a field-effect transistor (FET with an insulated gate) in which the voltage controls the device's conductivity.
- It is employed for signal amplification or switching.
- Electronic signals can be switched or amplified by using the conductivity's ability to change with the applied voltage.
- In both digital and analog circuits, MOSFETs are now even more prevalent than BJTs (bipolar junction transistors).
Specifications:
- Drain-source voltage: 500V.
- Drain-gate voltage (RGS=20 k Ω): 500V.
- Gate-source voltage: ±30V.
- Drain current DC: 12A.
- Drain current Pulse: 48A.
- Drain power dissipation (Tc = 25°C): 40W.
- Channel temperature: 150°C.
- Storage temperature range: -55~150°C.
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