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2SK794 MOSFET N-Channel 900V 5A 2.5Ohm
Description:
- A metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a field-effect transistor (FET with an insulated gate) in which the voltage controls the device's conductivity.
- It is employed for signal amplification or switching.
- Electronic signals can be switched or amplified by using the conductivity's ability to change with the applied voltage.
- In both digital and analog circuits, MOSFETs are now even more prevalent than BJTs (bipolar junction transistors).
- APPLICATIONS: Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
Specifications:
- Drain-source voltage: 900V.
- Gate-source voltage: ±20V.
- Drain Current-continuous at TC=25°C: 5A.
- Drain power dissipation (Tc = 25°C): 150W.
- Max. Operating Junction temperature: 150°C.
- Storage temperature range: -55~150°C.
- Drain-Source On-stage Resistance: 2.5Ω.
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