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75G60HD NPN MOSFET Transistor SMD 600V 75A
Description:
- The 75G60HD IGBT transistor is a three-terminal power semiconductor device.
- Originally utilized as an electrical switch, it evolved to combine high efficiency and quick switching.
- Electronic signals can be switched or amplified by utilizing the conductivity's capacity to change with applied voltage.
Specifications:
- Type of transistor: IPM.
- Type: NPN.
- Mounting: Surface mount.
- Collector-Emitter voltage: 600V.
- Gate-Emitter voltage: ±20V.
- DC Collector Current TC=25°C: 100A.
- DC Collector Current TC=100°C: 75A.
- Pulsed Collector Current: 225A.
- IGBT Max. Power Dissipation TC=25°C: 500W.
- FWD Max. Power Dissipation TC=25°C: 190W.
- Operating Junction Temperature: -40 to +175°C.
- Storage Temperature: -55 to +175°C.
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