Description:

• The advanced UltraFETTM technique is used in the production of these N-Channel power MOSFETs.
•  This process produces exceptional performance by achieving the lowest on-resistance per silicon area.
• The diode has a very short reverse recovery time and stored charge, and this device can tolerate tremendous energy in the avalanche mode.
• It was created to be used in low-voltage bus switches, motor drivers, relay drivers, switching regulators, switching converters, power management in portable and battery-operated devices, and other applications where power economy is crucial