80N65B4 TS1822 IXYS MOSFET 650V 160A

ZAR 201.25 ZAR 175.00
In stock
SKU
MOS-0019-G12

Description:

  • A metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a field-effect transistor (FET with an insulated gate) in which the voltage controls the device's conductivity. 
  • It is employed for signal amplification or switching. 
  • Electronic signals can be switched or amplified by using the conductivity's ability to change with the applied voltage. 
  • In both digital and analog circuits, MOSFETs are now even more prevalent than BJTs (bipolar junction transistors).

Specifications:

  • Voltage - Collector Emitter Breakdown (Max) - 650 V 
  • Current - Collector (Ic) (Max) - 160 A 
  • Current - Collector Pulsed (Icm) - 430 A 
  • Vce(on) (Max) @ Vge, Ic - 2V @ 15V, 80A 
  • Power - Max - 625 W 
  • Switching Energy - 3.77mJ (on), 1.2mJ (off) 
  • Mounting Type - Through Hole 
  • Package / Case - TO-247-3
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