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80N65B4 TS1822 IXYS MOSFET 650V 160A
Description:
- A metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a field-effect transistor (FET with an insulated gate) in which the voltage controls the device's conductivity.
- It is employed for signal amplification or switching.
- Electronic signals can be switched or amplified by using the conductivity's ability to change with the applied voltage.
- In both digital and analog circuits, MOSFETs are now even more prevalent than BJTs (bipolar junction transistors).
Specifications:
- Voltage - Collector Emitter Breakdown (Max) - 650 V
- Current - Collector (Ic) (Max) - 160 A
- Current - Collector Pulsed (Icm) - 430 A
- Vce(on) (Max) @ Vge, Ic - 2V @ 15V, 80A
- Power - Max - 625 W
- Switching Energy - 3.77mJ (on), 1.2mJ (off)
- Mounting Type - Through Hole
- Package / Case - TO-247-3
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