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K2645 2SK264 MOSFET N-Channel 600V 9A
Description:
- A metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a field-effect transistor (FET with an insulated gate) in which the voltage controls the device's conductivity.
- It is employed for signal amplification or switching.
- Electronic signals can be switched or amplified by using the conductivity's ability to change with the applied voltage.
- In both digital and analog circuits, MOSFETs are now even more prevalent than BJTs (bipolar junction transistors).
Features:
- High speed switching.
- Low on-resistance.
- No secondary breakdown.
- Low driving power.
- Avalanche-proof.
Specifications:
- Drain-Source-Voltage: VDS = 600 V.
- Continuous Drain Current: ID = 9 A.
- Pulsed Drain Current: ID (pulls) = 32 A.
- Gate-Source-Voltage: VGS = ±30 V.
- Max. Power Dissipation: PD = 50 W.
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