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BUZ80AFI N-Channel MOSFET TRANSISTOR 800V 2.4A 3Ohm
Description:
- A metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a field-effect transistor (FET with an insulated gate) in which the voltage controls the device's conductivity.
- It is employed for signal amplification or switching.
- Electronic signals can be switched or amplified by using the conductivity's ability to change with the applied voltage.
- In both digital and analog circuits, MOSFETs are now even more prevalent than BJTs (bipolar junction transistors).
- APPLICATIONS: Designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.
Specifications:
- Drain-source Voltage: 800V.
- Drain- gate Voltage: 800V.
- Gate-source Voltage: ±20V.
- Drain Current (continuous) at TC=25°C: 2.4A.
- Drain Current (continuous) at TC=100°C: 1.4A
- Drain Current (pulsed): 15A.
- Total Dissipation at TC=25°C: 40W.
- Storage Temperature: -65 to 150°C.
- Max. Operating Junction Temperature: 150°C.
- Casing: ISOWATT220.
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