Description:

• The HY53C256LS-10 is a Fast Page Mode Dynamic Random Access Memory (DRAM) chip.
• Memory Configuration: This DRAM is arranged as 256K words by 1 bit, making it ideal for use in applications that require dense memory arrays.
• Access Time: The chip has a maximum access time of 100 nanoseconds, allowing for faster read and write operations than its competitors.
• The HY53C256LS-10 comes in a 16-pin Plastic Dual In-line Package (PDIP), making it simple to install and connect to a circuit board.
• The supply voltage is commonly 5V, with an acceptable range of 4.5V to 5.5V.
• Operating Temperature: Designed for commercial use, it performs efficiently at temperatures ranging from 0°C to 70°C.
• Refresh Modes: This chip offers a variety of refresh modes, including RAS Only Refresh, CAS Before RAS Refresh, and Hidden Refresh, assuring data integrity while reducing power consumption.
• Built using CMOS (Complementary Metal-Oxide-Semiconductor) technology, this DRAM chip uses less power and has better noise immunity than earlier technologies.
• This DRAM chip, along with others of its sort, was frequently employed in earlier computer systems and other electronics that required small and reliable memory storage solutions.