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IRF510PBF N-channel MOSFET TO-220AB 5.6A 100V 3-Pin
Description:
- A metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a field-effect transistor (FET with an insulated gate) in which the voltage controls the device's conductivity.
- It is employed for signal amplification or switching.
- Electronic signals can be switched or amplified by using the conductivity's ability to change with the applied voltage.
- In both digital and analog circuits, MOSFETs are now even more prevalent than BJTs (bipolar junction transistors).
Specifications:
- FET Type: N-Channel.
- Drain to Source Voltage (VDSS): 100V.
- Current - Continuous Drain (Id) @ 25°C: 5.6A (TC).
- Drive Voltage (Max RDS On, Min RDS On): 10V.
- Power Dissipation (Max): 43W (TC).
- Operating Temperature: -55°C ~ 175°C (TJ).
- Mounting Type: Through Hole.
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