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IRF640 MOSFET 200V 18A TO-220
Description:
- The IRF640 is an N-channel enhancement mode MOSFET known for its fast switching, reliability, and energy efficiency.
- Its adaptability extends to uses where accuracy and dependability are necessary, like motor controllers, DC-DC converters, and solar power systems.
- This article examines the benefits, characteristics, and real-world uses of the IRF640, demonstrating how well it adapts to contemporary power electronics and renewable energy sources.
Specifications:
- Transistor Type: N Channel.
- Package Type: TO-220.
- Max Drain to Source Voltage: 200 V.
- Max Gate to Source Voltage: ±20 V.
- Max Continuous Drain Current: 18 A.
- Max Pulsed Drain Current: 72 A.
- Max Power Dissipation: 125 W.
- Storage & Operating Temperature: -65 to +150 °C.
- Mount: Through Hole.
- Transistor Element Material: SILICON.
- Drive Voltage (Max Rds. On, Min Rds. On): 10V.
- Power Dissipation (Max): 125W Tc.
- Voltage - Rated DC: 200V.
- Pin Count: 3.
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