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IRF740 N-Channel Mosfet TO-220-3 (TO-220AB) 400V 10A
Description:
- The company uses its consolidated strip layout-based MESH to build this power MOSFET.
- OVERLAY procedure.
- When compared to standard parts from different sources, our technology matches and improves the performances.
Specifications:
- Drain-source Voltage (VGS=0): 400V.
- Drain- gate Voltage (RGS=20kΩ): 400V.
- Gate-source Voltage: ±20V.
- Drain Current (continuous) at Tc=25°C: 10A.
- Drain Current (continuous) at Tc=100°C: 6.3A.
- Drain Current (pulsed): 40A.
- Total Dissipation at Tc=25°C: 125W.
- Storage Temperature: -65 to 150°C.
- Max. Operating Junction Temperature: 150°C.
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