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IRFB3206 N-Channel MOSFET TO-220AB 60V 210A 300W
Description:
- A metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a field-effect transistor (FET with an insulated gate) in which the voltage controls the device's conductivity.
- It is employed for signal amplification or switching.
- Electronic signals can be switched or amplified by using the conductivity's ability to change with the applied voltage.
- In both digital and analog circuits, MOSFETs are now even more prevalent than BJTs (bipolar junction transistors).
Specifications:
- Continuous Drain Current TC=25°C (Silicon Limited): 210A.
- Continuous Drain Current TC=100°C (Silicon Limited): 150A.
- Continuous Drain Current TC=25°C (Wire Bond Limited): 120A.
- Pulsed Drain Current: 840A.
- Power Dissipation: 300W.
- Gate-to-Source Voltage: ± 20V.
- Operating Junction and Storage Temperature Range: -55 to +175°C.
- Soldering Temperature, for 10 seconds: 300°C.
- Min. Drain-to-Source Breakdown Voltage: 60V.
- Drain-to-Source On-Resistance (Max.): 3.0m Ω.
- Casing: TO-220AB.
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