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IRFB4110 N-Channel MOSFET Transistor 100V 180A
Description:
- A metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a field-effect transistor (FET with an insulated gate) in which the voltage controls the device's conductivity.
- It is employed for signal amplification or switching.
- Electronic signals can be switched or amplified by using the conductivity's ability to change with the applied voltage.
- In both digital and analog circuits, MOSFETs are now even more prevalent than BJTs (bipolar junction transistors).
Specifications:
- Drain-Source Voltage: 100V.
- Gate-Source Voltage-Continuous: ±20V.
- Drain Current-Continuous: 180A.
- Drain Current-Single Pulse: 670A.
- Total Dissipation TC=25°C: 370W.
- Max. Operating Junction Temperature: 175°C.
- Storage Temperature: -55 to 175°C.
- Min. Drain-Source Breakdown Voltage: 100V.
- Drain-Source On-Resistance: 4.5m Ω.
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