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IRFP054NPbF MOSFET N-CH 55V 81A 170W TO-247AC
Description:
- Fifth Generation HEXFET Power MOSFETs use new processing techniques to provide incredibly low resistance per silicon area.
- This advantage, along with HEXFET power MOSFETs' well-known rapid switching speed and ruggedized device design, gives the designer a very dependable and efficient device that may be used in a wide range of other applications.
- For commercial-industrial applications where greater power levels make the usage of TO-220 devices impractical, the TO-247AC package is recommended.
- Due to its separated mounting hole, the TO-247AC is comparable to but better than the previous TO-218 package.
Specifications:
- Continuous Drain Current TC = 25°C: 81A.
- Continuous Drain Current TC = 100°C: 57A.
- Pulsed Drain Current: 290A.
- Maximum Power Dissipation TC = 25°C: 170W.
- Operating Junction and Storage Temperature Range: -55 to + 175°C.
- Soldering Temperature, for 10 seconds (1.6mm from case): 300°C.
- MIN Drain-to-Source Breakdown Voltage: 55V.
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