Description:

• This N-channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET that is designed, tested, and guaranteed to withstand a specific amount of energy in the breakdown avalanche mode of operation. 
• Applications for these power MOSFETs include motor drivers, relay drivers, switching regulators, switching converters, and drivers for high-power bipolar switching transistors that need low gate drive power and high speed. 
• Integrated circuits can be used directly to operate these kinds.