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IRFP450 N-channel MOSFET Transistor 14 A 500V 3-Pin TO-247AC
Description:
- This power MOSFET is built using the company's consolidated strip layout-based MESH technology.
- OVERLAY procedure.
- When compared to other technologies, these matches and enhances performance.
- standard components from different vendors.
Specifications:
- Drain-source Voltage: 500V.
- Drain- gate Voltage: 500V.
- Gate-source Voltage: ±20V.
- Drain Current (continuous) at TC=25°C: 14A.
- Drain Current (continuous) at TC=100°C: 8.7A.
- Drain Current (pulsed): 56A.
- Total Dissipation at TC=25°C: 190W.
- Storage Temperature: -65 to 150°C.
- Max. Operating Junction Temperature: 150°C.
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