Description:

• This advanced power MOSFET has been designed, tested, and shown to be able to withstand a certain amount of energy when operating in the breakdown avalanche mode. 
• It is a silicon gate power field effect transistor with a P-channel enhancement mode that is intended for use in switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors that need low gate drive power and high speed. 
• Integrated circuits can be used directly to operate these kinds.