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IRFPE50 N-Channel MOSFET 7.8A 800V 3-Pin TO-247AC
Description:
- A metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a field-effect transistor (FET with an insulated gate) in which the voltage controls the device's conductivity.
- It is employed for signal amplification or switching.
- Electronic signals can be switched or amplified by using the conductivity's ability to change with the applied voltage.
- In both digital and analog circuits, MOSFETs are now even more prevalent than BJTs (bipolar junction transistors).
- APPLICATIONS: Designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.
Specifications:
- Continuous drain current TC=25°C: 7.8A.
- Continuous drain current TC=100°C: 4.9A.
- Pulsed drain current: 31A.
- Power dissipation TC=25°C: 190W.
- Gate-source voltage: 20V.
- Avalanche current: 7.8A.
- Operating junction and storage temperature range: -55 to 150°C.
- Soldering temperature (for 10sec): 300°C.
- Drain-source breakdown voltage (min.): 800V.
- Casing: TO-247AC.
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