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STP65NF06 N CHANNEL MOSFET 60A 60V
Description:
- A metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a field-effect transistor (FET with an insulated gate) in which the voltage controls the device's conductivity.
- It is employed for signal amplification or switching.
- Electronic signals can be switched or amplified by using the conductivity's ability to change with the applied voltage.
- In both digital and analog circuits, MOSFETs are now even more prevalent than BJTs (bipolar junction transistors).
Specifications:
- Channel Type: N.
- Maximum Continuous Drain Current: 60 A.
- Maximum Drain Source Voltage: 60 V.
- Mounting Type: Through Hole.
- Pin Count: 3.
- Maximum Drain Source Resistance: 14 m Ω.
- Maximum Gate Threshold Voltage: 4V.
- Minimum Gate Threshold Voltage: 2V.
- Maximum Power Dissipation: 110 W.
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