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IRFZ30 N-channel Hexfet Power Mosfet TO-220-3 50V 30A
Description:
- A metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a field-effect transistor (FET with an insulated gate) in which the voltage controls the device's conductivity.
- It is employed for signal amplification or switching.
- Electronic signals can be switched or amplified by using the conductivity's ability to change with the applied voltage.
- In both digital and analog circuits, MOSFETs are now even more prevalent than BJTs (bipolar junction transistors).
Specifications:
- Drain-source Voltage: 50V.
- Drain-gate voltage: 50V.
- Gate-source Voltage: ±20V.
- Drain Current (continuous) at TC=25°C: 30A.
- Drain Current (continuous) at TC=100°C: 19A.
- Drain Current (pulsed): 80A.
- Total Power Dissipation at TC=25°C: 75W.
- Max. Operating Junction and Storage Temperature: -55 to 150°C.
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