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IRFZ34 N-Channel MOSFET TO-220 3-Pin 55V 26A
Description:
- International Rectifier's Fifth Generation HEXFETs use innovative processing techniques to provide the lowest on-resistance per silicon area.
- This advantage, along with HEXFET Power MOSFETs' well-known fast switching speed and ruggedized device design, gives the designer a highly effective device that may be used in a wide range of applications.
- For all commercial-industrial applications with power dissipation levels up to about 50 watts, the TO-220 package is universally recommended.
- The TO-220 is widely accepted in the industry, due in part to its low package cost and low heat resistance.
Specifications:
- Drain-source Voltage: 55V.
- Gate-source Voltage: ±20V.
- Drain Current (continuous) at TC=25°C: 26A.
- Drain Current (continuous) at TC=100°C: 18A.
- Drain Current (pulsed): 100A.
- Total Power Dissipation at TC=25°C: 56W.
- Max. Operating Junction and Storage Temperature: -55 to 175°C.
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