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IRFZ48 N-Channel MOSFET TO-220 60V 50A
Description:
- Advanced HEXFET Power MOSFETs use advanced processing techniques to provide ultra-low on-resistance per silicon area.
- This advantage, along with the ruggedized device architecture and fast-switching speed for which HEXFET power MOSFETs are renowned, gives the designer a very dependable and efficient device that can be used in a wide range of applications.
- For all commercial-industrial applications with power dissipation levels up to about 50 watts, the TO-220 package is universally recommended.
- The TO-220 is widely accepted in the industry, due in part to its low package cost and low heat resistance.
Specifications:
- Drain-source Voltage: 60V.
- Gate-source Voltage: ±20V.
- Drain Current (continuous) at TC=25°C: 50A.
- Drain Current (continuous) at TC=100°C: 50A.
- Drain Current (pulsed): 290A.
- Total Power Dissipation at TC=25°C: 190W.
- Max. Operating Junction and Storage temperature: -55 to 175°C.
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