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KM41C256P-8 Fast Page DRAM, 256KX1, 80ns, CMOS, PDIP16
Description:
- The KM41C256P-8 is a 256K x 1-bit Dynamic RAM with 262,144 words per bit.
- It is built using sophisticated CMOS technology, which results in low power consumption and strong noise immunity.
- The fast page mode function provides for quick access to data inside a single row, making it ideal for applications that require high-speed retrieval.
Electrical Characteristics:
- Speed Category: 80ns.
- Memory Capacity: 256K x 1 bit (262,144 bits).
- DRAM Type: Fast Page Mode.
- Technology: CMOS (Complementary Metal-Oxide-Semiconductor).
- Operating Voltage (Vcc): 5V ±10%.
- Input High Voltage (VIH): 2.4V minimum.
- Input Low Voltage (VIL): 0.8V maximum.
- Output High Voltage (VOH): 2.4V minimum at IOH = -4mA.
- Output Low Voltage (VOL): 0.4V maximum at IOL = 8mA.
- Timing Characteristics:
- Access Time: 80ns (maximum).
- Cycle Time: 125ns (minimum).
- Row Address Strobe (RAS) Access Time: 50ns.
- Column Address Strobe (CAS) Access Time: 20ns.
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