Description:

• The N82S191N is a 16K-bit TTL bipolar PROM (Programmable Read-Only Memory) that can hold 2048 words of 8 bits each.
• This device is field programmable, which means you can use the Signe tics Generic I fusing technique to generate custom logic patterns.
• Field Programmable: Custom patterns made with the fusing method.
• Outputs: Three-state outputs allow for smooth word expansion in bused systems.
• Chip Enable Inputs: Three chip enable inputs allow for easy memory expansion.
• On-chip address decoding simplifies design by minimizing the number of external components.
• Maximum input loading is -100µA.
• Outputs at Low Level: When not programmed, all outputs are logically low.
• Access time is 80 ns for N82S191 and 55 ns for N82S191A.
• Power dissipation: 40mW per bit.
• Operating temperatures range from 0 to +75°C.
• This PROM is widely utilized in sequential controllers, microprogramming, hardwired algorithms, control stores, random logic, and code conversion applications.
• It's an adaptable piece of technology for a variety of embedded system applications.