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BUW13A NPN BJT MOSFET 400V 175W 15A
Description:
- A metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a field-effect transistor (FET with an insulated gate) in which the voltage controls the device's conductivity.
- It is employed for signal amplification or switching.
- Electronic signals can be switched or amplified by using the conductivity's ability to change with the applied voltage.
- In both digital and analog circuits, MOSFETs are now even more prevalent than BJTs (bipolar junction transistors).
Specifications:
- Maximum Collector Current (IC): 15A.
- Maximum Collector-Emitter Voltage: 400V.
- Configuration: Single.
- Minimum DC Current Gain (HFE): 10.
- Maximum Operating Temperature: 150°C.
- Channel Type: NPN.
- Maximum Power Dissipation Ambient: 175W.
SKU | MOS-0083-F13 |
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