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NGD8201NG N-Channel IGBT MOSFET 400V 20A 369C
Description:
- This Logic Level Insulated Gate Bipolar Transistor (IGBT) has monolithic circuitry with ESD and overvoltage clamping protection for inductive coil driver applications.
- Ignition, direct fuel injection, and other applications requiring high voltage and current switching are among the primary uses.
Specifications:
- Collector-emitter voltage: 440V.
- Collector-gate voltage: 440V.
- Gate-emitter voltage: 15V.
- Collector continuous current: 20A DC.
- Collector current Pulsed TC=25°C: 50A DC.
- Continuous gate current: 1.0mA.
- Transient gate current: 20mA.
- Power dissipation TC=25°C: 125W.
- Operating and storage temperature: -55 to +175°C.
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