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SCM5101E-1 SRAM
Description:
- With its 1K words by 4 bits structure, the SCM5101E-1 has 4,096 bits of static memory.
- It functions efficiently, with an average access time of 85ns, making it perfect for applications that require speed.
- The chip is constructed using CMOS technology, which results in high density and low power consumption.
Electrical Characteristics:
- Supply Voltage (Vcc): 4.5V to 5.5V.
- Input High Voltage (VIH): 2.0V minimum.
- Input Low Voltage (VIL): 0.8V maximum.
- Output High Voltage (VOH): 2.4V minimum at IOH = -4mA.
- Output Low Voltage (VOL): 0.4V maximum at IOL = 8mA.
- Operating Current (ICC): 50mA maximum.
- Standby Current (ISB): 500µA maximum.
- Performance Characteristics:
- Access Time (tACC): 85ns maximum.
- Output Hold Time (tOH): 10ns minimum.
- Cycle Time (tCYC): 85ns minimum.
- Temperature Characteristics:
- Operating Temperature Range: 0°C to +70°C (Commercial).
- Storage Temperature Range: -65°C to +150°C.
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