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IXGH30N60C2D1 SP0433 TF3760-PHILIPPINES MOSFET 600V 70A
Description:
- These IGBTs were created with the aid of a sophisticated, in-house trench gate field stop construction.
- These devices belong to the innovative HB series of IGBTs, which optimize the efficiency of any frequency converter by striking the ideal balance between conduction and switching loss.
- Additionally, the highly narrow parameter distribution and slightly positive VCE (sat) temperature coefficient led to safer paralleling operation.
Specifications:
- Voltage - Collector Emitter Breakdown (Max): 600V.
- Current - Collector (Ic) (Max): 70A.
- Current - Collector Pulsed (I cm): 150A.
- Power – Max: 190W.
- Operating Temperature: -55°C ~ 150°C (TJ).
- Mounting Type: Through Hole.
| SKU | MOS-0017-G12 |
|---|
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