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SPD03N60C3BTMA1 N-Channel MOSFET, 3.2 A, 650 V CoolMOS C3, 3-Pin DPAK Infineon
Description:
- The CoolMOS, OptiMOS, and StrongIRFET families of MOSFET devices are only a few of the many models that Infineon has to offer.
- To increase efficiency, power density, and cost effectiveness, they provide best-in-class performance.
- Automotive approved MOSFETs that meet AEC-Q101 industry standards are advantageous for designs that demand superior protective features and high quality.
Features:
- Maximum Continuous Drain Current:3.2 A
- Maximum Drain Source Voltage:650 V
- Maximum Drain Source Resistance:3.8 A
- Maximum Gate Threshold Voltage:3.9V
- Minimum Gate Threshold Voltage:2.1V
- Maximum Gate Source Voltage: -30 V, +30 V
- Maximum Operating Temperature: +150 °C
- New revolutionary high voltage technology
- Ultra-low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- High peak current capability
- Improved transconductance
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