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SPD03N60C3BTMA1 N-Channel MOSFET, 3.2 A, 650 V CoolMOS C3, 3-Pin DPAK Infineon
Maximum Continuous Drain Current:3.2 A
Maximum Drain Source Voltage:650 V
Maximum Drain Source Resistance:3.8 Ž©
Maximum Gate Threshold Voltage:3.9V
Minimum Gate Threshold Voltage:2.1V
Maximum Gate Source Voltage:-30 V, +30 V
Typical Input Capacitance @ Vds:400 pF @ 25 V
Maximum Operating Temperature:+150 ‚°C
Typical Gate Charge @ Vgs:13 nC @ 10 V
Infineon CoolMOSžC3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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