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STGW80H65DFB 742 Mosfet
Maximum Continuous Drain Current:49 A
Maximum Drain Source Voltage:55 V
Maximum Drain Source Resistance:17.5 mŽ©
Maximum Gate Threshold Voltage:4V
Minimum Gate Threshold Voltage:2V
Typical Input Capacitance @ Vds:1470 pF@ 25 V
Maximum Drain Source Voltage:55 V
Maximum Drain Source Resistance:17.5 mŽ©
Maximum Gate Threshold Voltage:4V
Minimum Gate Threshold Voltage:2V
Typical Input Capacitance @ Vds:1470 pF@ 25 V
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET‚® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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