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STGW80H65DFB 742 Mosfet 650V 80A
Description:
- These IGBTs were created with the aid of a sophisticated, in-house trench gate field stop construction.
- These devices belong to the innovative HB series of IGBTs, which optimize the efficiency of any frequency converter by striking the ideal balance between conduction and switching loss.
- Additionally, the highly narrow parameter distribution and slightly positive VCE (sat) temperature coefficient led to safer paralleling operation.
Specifications:
- Collector-emitter voltage (VGE = 0): 650V.
- Continuous collector current at TC = 25 °C: 120A.
- Continuous collector current at TC = 100 °C: 80A.
- Pulsed collector current (tp ≤ 1 μs, TJ < 175 °C): 300A.
- Gate-emitter voltage: ±20V.
- Transient gate-emitter voltage: ±30V.
- Total power dissipation at TC = 25 °C: 470W.
- Operating junction temperature range: - 55 to 175°C.
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