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STP13N60 N-Channel MDmesh MOSFET TO-220 600V 11A
Description:
- This device is an N-channel power MOSFET designed with MD mesh M2 technology.
- The device's strip architecture and improved vertical structure result in reduced on-resistance and optimum switching characteristics, making it ideal for the most demanding high-efficiency converters.
Specifications:
- Gate-source voltage: ±25V.
- Drain current (continuous) at TC = 25 °C: 11A.
- Drain current (continuous) at TC = 100 °C: 7A.
- Drain current (pulsed): 44A.
- Total power dissipation at TC = 25 °C: 110W.
- Operating junction temperature range: -55 to 150°C.
- Source-drain current: 11A.
- Channel: N.
- TO-220 package.
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