Description:

• Texas Instruments designed the TMS4164-15NL Dynamic Random Access Memory (DRAM) device.
• It has a storage capacity of 64K x 1 (64,536 bits) and runs in Page Mode, which allows for quick memory access.
• Memory capacity is 64K x 1 (65,536 bits).
• Page Mode Operation improves access efficiency by allowing several data bits to be fetched in fewer cycles.
• Access time is 150 nanoseconds, which ensures quick data retrieval.
• Supply Voltage: Operates between 4.5V and 5.5V.
• Technology: Built with NMOS technology for dependable performance.
• Refresh Requirements: There is a 256-cycle refresh period to ensure data integrity.
• Packaging: Standard 16-pin Dual In-Line Package (DIP).
• Operating temperature range is 0°C to 70°C.
• High Efficiency: Using Page Mode enables for more efficient data access.
• Low electricity Consumption: The device is designed to consume as little electricity as possible.
• High noise immunity ensures data integrity even in electrically loud conditions.
• Wide Operating Voltage Range: Supports a wide range of input voltages, making it suitable for a variety of applications.
• 3-State Output: Enables bus-oriented designs while minimizing conflict on shared lines.
• This DRAM chip is ideal for applications requiring efficient and rapid memory access.